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Papers in 2017 – 2016

Journal Papers Published in 2017 – 2016

  1. S. M. Lee, J. H. Yum, S. Yoon, E. S. Larsen, W. C. Lee, S. K. Kim, S. Shervin, W. Wang, J.-H. Ryou, C. W. Bielawski, and J. Oh, “Atomic layer deposition of single-crystalline BeO epitaxially grown on GaN substrates,” ACS Appl. Mater. Interfaces 9 (48), 41973-41979 (2017). https://doi.org/10.1021/acsami.7b13487
  2. S. Sing, M. Yarali, S. Shervin, V. Venkateswaran, K. Olenick, J. A. Olenick, J.-H. Ryou, and A. Mavrokefalos, “Temperature-dependent thermal conductivity of flexible yttria-stabilized zirconia substrate via 3ω technique,” Phys. Status Solidi A 214 (10), 1700069-1-5 (2017). [Featured back cover article in issue 10 of volume 214 (October, 2017)] https://doi.org/10.1002/pssa.201700069
  3. S. K. Oh, M. U. Cho, J. Dallas, T. Jang, D. G. Lee, S. Pouladi, J. Chen, W. Wang, S. Shervin, H. Kim, S. Shin, S. Choi, J. S. Kwak, and J.-H. Ryou, “High-power flexible AlGaN/GaN heterostructure field-effect transistors with negative differential conductivity suppression,” Appl. Phys. Lett. 111 (13), 133501-1-5 (2017). https://doi.org/10.1063/1.5004799
  4. M. Rathi, P. Dutta, N. Zheng, Y. Yao; D. Khatiwada, Y. Gao, S. Sun, Y. Li, S. Pouladi, P. Ahrenkiel, J.-H. Ryou, and V. Selvamanickam, “High opto-electronic quality n-type single-crystalline-like GaAs thin films on flexible metal substrates,” J. Mater. Chem. C 5 (31), 7919–7926 (2017). https://doi.org/10.1039/C7TC02443F
  5. M. Baek, M. Oh, B. Parida, M. S. Kim, J.-H. Ryou, and H. Kim, “Hybrid oblique-angle deposited ITO/silver nanowire transparent conductive electrodes for brighter light emitters,” IEEE Trans. Electron Device. 64 (9), 3690-3695 (2017). https://doi.org/10.1109/TED.2017.2730439
  6. E. Jung, S. Jeong, J.-H. Ryou, and H. Kim, “Deep-trap states of GaN-based light emitting diodes analyzed by space charge limited conduction model,” J. Nanosci. Nanotechnol. 17 (10), 7339–7343 (2017). https://doi.org/10.1166/jnn.2017.14735
  7. M. Oh, H. J. Jeong, M. S. Jeong, K.-S. Ahn, K.-K. Kim, J.-H. Ryou, and H. Kim, “Functional hybrid indium-tin-oxide transparent conductive electrodes for light-emitters,” J. Alloy. Compound. 724, 813-819 (2017). https://doi.org/10.1016/j.jallcom.2017.07.042
  8. W. Wang, S. Shervin, S. K. Oh, J. Chen, Y. Huai, S. Pouladi, H. Kim, S.-N. Lee, and J.-H. Ryou, “Flexible AlGaInN/GaN heterostructures for high-hole-mobility transistors,” IEEE Electron Device Lett. 38 (8), 1086-1089 (2017). https://doi.org/10.1109/LED.2017.2720480
  9. B. Parida, S. Kim, M. Oh, S. Jeong, M. K. Baek, J.-H. Ryou, and H. Kim, “Nanostructured NiO/Si heterojunction photodetector,” Mater. Sci. Semicon. Process. 71, 29-34 (2017). https://doi.org/10.1016/j.mssp.2017.07.002
  10. S. Kim, K.-S. Ahn, J.-H. Ryou, and H. Kim, “Temperature-dependent DC characteristics of AlInN/GaN high-electron-mobility transistors,” Electron. Mater. Lett. 13 (4), 302-306 (2017). https://doi.org/10.1007/s13391-017-1606-1
  11. M. Asadirad, S. Pouladi, S. Shervin, S. K. Oh, K. H. Lee, J. Kim, S.-N. Lee, Y. Gao, P. Dutta, V. Selvamanickam, and J.-H. Ryou, “Numerical simulation for operation of flexible thin-film transistors with bending,” IEEE Electron Device Lett. 38 (2), 217-220 (2017). https://doi.org/10.1109/LED.2016.2645451
  12. H. Brahmi, S. Ravipati, S. Shervin, W. Wang, J.-H. Ryou, and A. Mavrokefalos, “Electrical and optical properties of sub-10nm nickel silicide films for silicon solar cells,” J. Phys. D: Appl. Phys. 50 (3), 035102-1-10 (2017). https://doi.org/10.1088/1361-6463/50/3/035102
  13. J.-H. Lee, S.-H. Han, K.-R. Song, J.-H. Ryou, H. Na, and S.-L. Lee, “Effect of SiO2 hexagonal pattern on the crystal and optical properties of epitaxial lateral overgrown semipolar (11-22) GaN film,” Microelectron. Eng. 168, 32-36 (2017). https://doi.org/10.1016/j.mee.2016.10.017
  14. S. K. Oh, T. Jang, S. Pouladi, Y. J. Jo, H.-Y. Ko, J.-H. Ryou, and J. S. Kwak, “Output power enhancement in AlGaN/GaN heterostructure filed-effect transistors with multi-level metallization,” Appl. Phys. Express 10 (1), 016502-1-3 (2017). https://doi.org/10.7567/APEX.10.016502
  15. Y. Gao, M. Asadirad, Y. Yao, P. Dutta, E. Galstyan, S. Shervin, K. H. Lee, S. Pouladi, S. Sun, Y. Li, M. Rathi, J.-H. Ryou, and V. Selvamanickam, “High-performance flexible thin-film transistors based on single-crystal-like silicon epitaxially grown on metal tape by roll-to-roll continuous deposition process,” ACS Appl. Mater. Interfaces 8 (43), 29565-29572 (2016). https://doi.org/10.1021/acsami.6b06770
  16. S. H. Kim, K. H. Lee, H. J. Park, S. Shervin, M. Asadirad, S.-N. Lee, J. S. Kwak, and J.-H. Ryou, “Patterned Ga2O3 for current blocking and optical scattering in visible light-emitting diodes,” Phys. Status Solidi A 213 (10), 2769-2772 (2016). https://doi.org/10.1002/pssa.201600240
  17. K.-H. Lee, M. Asadirad, S. Shervin, S. K Oh, J. T. Oh, J.-O. Song, Y.-T. Moon, and J.-H. Ryou, “Thin-film-flip-chip LEDs grown on Si substrate using wafer-level chip-scale package,” IEEE Photon. Technol. Lett. 28 (18), 1956-1959 (2016). https://doi.org/10.1109/LPT.2016.2580039
  18. M. Asadirad, Y. Gao, P. Dutta, Y. Yao, S. Shervin, S. Sun, S. Ravipati, S.-H. Kim, K. H. Lee, V. Selvamanickam, and J.-H. Ryou, “High-performance flexible thin-film transistors based on single-crystal-like germanium on glass,” Adv. Electron. Mater. 2 (8), 1600041-1-7 (2016). [Featured frontispiece article in issue 8 of volume 2 (August, 2016)] https://doi.org/10.1002/aelm.201600041
  19. J. Kim, M.-H. Ji, T. Detchprohm, R. D. Dupuis, S. Shervin, and J.-H. Ryou, “Effect of lattice-matched InAlGaN electron-blocking layer on hole transport and distribution in InGaN/GaN multiple quantum wells of visible light-emitting diodes,” Phys. Status Solidi A 213 (5), 1296-1301 (2016). https://doi.org/10.1002/pssa.201532764
  20. S. H. Kim, S. Singh, S. K. Oh, D. K. Lee, K. H. Lee, S. Shervin, M. Asadirad, V. Venkateswaran, K. Olenick, J. Olenick, S.-N. Lee, J. S. Kwak, A. Mavrokefalos, and J.-H. Ryou, “Visible light-emitting diodes on flexible ceramic substrate with improved thermal management,” IEEE Electron Device Lett. 37 (5), 615-617 (2016). https://doi.org/10.1109/LED.2016.2547877
  21. H. J. Park, H. J. Bae, J. B. Park, J. S. Ha, T. Jeong, J. H. Baek, S. H. Kim, and J.-H. Ryou, “Enhanced wall-plug efficiency in monolithically-integrated vertical light-emitting-diode cells based on III-nitride heterostructures,” J. Vac. Sci. Tech. B 34 (2), 021206-1-5 (2016). https://doi.org/10.1116/1.4943941
  22. S. Shervin, S.-H. Kim, M. Asadirad, S. Yu. Kapov, D. Zimina, and J.-H. Ryou, “Bendable III-N visible light-emitting diodes beyond mechanical flexibility:  Theoretical study on quantum efficiency improvement and color tunability by external strain,” ACS Photon. 3 (3), 486-493 (2016). [Featured cover article in issue 3 of volume 3 (March, 2016)] https://doi.org/10.1021/acsphotonics.5b00745
  23. S. Kim, J.-H. Ryou, R. D. Dupuis, and H. Kim, “Reduced gate leakage current of AlInN:Mg/GaN high electron mobility transistors,” Electron. Lett. 52 (2), 157-159 (2016). https://doi.org/10.1049/el.2015.3430