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Ryou Research Group

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Papers in 2017 – 2016

Journal Papers Published in 2017 – 2016

  1. S. M. Lee, J. H. Yum, S. Yoon, E. S. Larsen, W. C. Lee, S. K. Kim, S. Shervin, W. Wang, J.-H. Ryou, C. W. Bielawski, and J. Oh, “Atomic layer deposition of single-crystalline BeO epitaxially grown on GaN substrates,”ACS Appl. Mater. Interfaces 9 (48), 41973-41979 (2017).
  2. S. Sing, M. Yarali, S. Shervin, V. Venkateswaran, K. Olenick, J. A. Olenick, J.-H. Ryou, and A. Mavrokefalos, “Temperature-dependent thermal conductivity of flexible yttria-stabilized zirconia substrate via 3ω technique,”Phys. Status Solidi A 214 (10), 1700069-1-5 (2017). [Featured back cover article in issue 10 of volume 214 (October, 2017)]
  3. S. K. Oh, M. U. Cho, J. Dallas, T. Jang, D. G. Lee, S. Pouladi, J. Chen, W. Wang, S. Shervin, H. Kim, S. Shin, S. Choi, J. S. Kwak, and J.-H. Ryou, “High-power flexible AlGaN/GaN heterostructure field-effect transistors with negative differential conductivity suppression,” Appl. Phys. Lett. 111 (13), 133501-1-5 (2017).
  4. M. Rathi, P. Dutta, N. Zheng, Y. Yao; D. Khatiwada, Y. Gao, S. Sun, Y. Li, S. Pouladi, P. Ahrenkiel, J.-H. Ryou, and V. Selvamanickam, “High opto-electronic quality n-type single-crystalline-like GaAs thin films on flexible metal substrates,” J. Mater. Chem. C 5 (31), 7919–7926 (2017).
  5. M. Baek, M. Oh, B. Parida, M. S. Kim, J.-H. Ryou, and H. Kim, “Hybrid oblique-angle deposited ITO/silver nanowire transparent conductive electrodes for brighter light emitters,” IEEE Trans. Electron Device. 64 (9), 3690-3695 (2017).
  6. E. Jung, S. Jeong, J.-H. Ryou, and H. Kim, “Deep-trap states of GaN-based light emitting diodes analyzed by space charge limited conduction model,” J. Nanosci. Nanotechnol. 17 (10), 7339–7343 (2017).
  7. M. Oh, H. J. Jeong, M. S. Jeong, K.-S. Ahn, K.-K. Kim, J.-H. Ryou, and H. Kim, “Functional hybrid indium-tin-oxide transparent conductive electrodes for light-emitters,” J. Alloy. Compound. 724, 813-819 (2017).
  8. W. Wang, S. Shervin, S. K. Oh, J. Chen, Y. Huai, S. Pouladi, H. Kim, S.-N. Lee, and J.-H. Ryou, “Flexible AlGaInN/GaN heterostructures for high-hole-mobility transistors,” IEEE Electron Device Lett. 38 (8), 1086-1089 (2017).
  9. B. Parida, S. Kim, M. Oh, S. Jeong, M. K. Baek, J.-H. Ryou, and H. Kim, “Nanostructured NiO/Si heterojunction photodetector,” Mater. Sci. Semicon. Process. 71, 29-34 (2017).
  10. S. Kim, K.-S. Ahn, J.-H. Ryou, and H. Kim, “Temperature-dependent DC characteristics of AlInN/GaN high-electron-mobility transistors,” Electron. Mater. Lett. 13 (4), 302-306 (2017).
  11. M. Asadirad, S. Pouladi, S. Shervin, S. K. Oh, K. H. Lee, J. Kim, S.-N. Lee, Y. Gao, P. Dutta, V. Selvamanickam, and J.-H. Ryou, “Numerical simulation for operation of flexible thin-film transistors with bending,” IEEE Electron Device Lett. 38 (2), 217-220 (2017).
  12. H. Brahmi, S. Ravipati, S. Shervin, W. Wang, J.-H. Ryou, and A. Mavrokefalos, “Electrical and optical properties of sub-10nm nickel silicide films for silicon solar cells,” J. Phys. D: Appl. Phys. 50 (3), 035102-1-10 (2017).
  13. J.-H. Lee, S.-H. Han, K.-R. Song, J.-H. Ryou, H. Na, and S.-L. Lee, “Effect of SiO2 hexagonal pattern on the crystal and optical properties of epitaxial lateral overgrown semipolar (11-22) GaN film,” Microelectron. Eng. 168, 32-36 (2017).
  14. S. K. Oh, T. Jang, S. Pouladi, Y. J. Jo, H.-Y. Ko, J.-H. Ryou, and J. S. Kwak, “Output power enhancement in AlGaN/GaN heterostructure filed-effect transistors with multi-level metallization,” Appl. Phys. Express 10 (1), 016502-1-3 (2017).
  15. Y. Gao, M. Asadirad, Y. Yao, P. Dutta, E. Galstyan, S. Shervin, K. H. Lee, S. Pouladi, S. Sun, Y. Li, M. Rathi, J.-H. Ryou, and V. Selvamanickam, “High-performance flexible thin-film transistors based on single-crystal-like silicon epitaxially grown on metal tape by roll-to-roll continuous deposition process,” ACS Appl. Mater. Interfaces 8 (43), 29565-29572 (2016).
  16. S. H. Kim, K. H. Lee, H. J. Park, S. Shervin, M. Asadirad, S.-N. Lee, J. S. Kwak, and J.-H. Ryou, “Patterned Ga2O3 for current blocking and optical scattering in visible light-emitting diodes,” Phys. Status Solidi A 213 (10), 2769-2772 (2016).
  17. K.-H. Lee, M. Asadirad, S. Shervin, S. K Oh, J. T. Oh, J.-O. Song, Y.-T. Moon, and J.-H. Ryou, “Thin-film-flip-chip LEDs grown on Si substrate using wafer-level chip-scale package,” IEEE Photon. Technol. Lett. 28 (18), 1956-1959 (2016).
  18. M. Asadirad, Y. Gao, P. Dutta, Y. Yao, S. Shervin, S. Sun, S. Ravipati, S.-H. Kim, K. H. Lee, V. Selvamanickam, and J.-H. Ryou, “High-performance flexible thin-film transistors based on single-crystal-like germanium on glass,” Adv. Electron. Mater. 2 (8), 1600041-1-7 (2016). [Featured frontispiece article in issue 8 of volume 2 (August, 2016)]
  19. J. Kim, M.-H. Ji, T. Detchprohm, R. D. Dupuis, S. Shervin, and J.-H. Ryou, “Effect of lattice-matched InAlGaN electron-blocking layer on hole transport and distribution in InGaN/GaN multiple quantum wells of visible light-emitting diodes,” Phys. Status Solidi A 213 (5), 1296-1301 (2016).
  20. S. H. Kim, S. Singh, S. K. Oh, D. K. Lee, K. H. Lee, S. Shervin, M. Asadirad, V. Venkateswaran, K. Olenick, J. Olenick, S.-N. Lee, J. S. Kwak, A. Mavrokefalos, and J.-H. Ryou, “Visible light-emitting diodes on flexible ceramic substrate with improved thermal management,” IEEE Electron Device Lett. 37 (5), 615-617 (2016).
  21. H. J. Park, H. J. Bae, J. B. Park, J. S. Ha, T. Jeong, J. H. Baek, S. H. Kim, and J.-H. Ryou, “Enhanced wall-plug efficiency in monolithically-integrated vertical light-emitting-diode cells based on III-nitride heterostructures,” J. Vac. Sci. Tech. B 34 (2), 021206-1-5 (2016).
  22. S. Shervin, S.-H. Kim, M. Asadirad, S. Yu. Kapov, D. Zimina, and J.-H. Ryou, “Bendable III-N visible light-emitting diodes beyond mechanical flexibility:  Theoretical study on quantum efficiency improvement and color tunability by external strain,” ACS Photon. 3 (3), 486-493 (2016). [Featured cover article in issue 3 of volume 3 (March, 2016)]
  23. S. Kim, J.-H. Ryou, R. D. Dupuis, and H. Kim, “Reduced gate leakage current of AlInN:Mg/GaN high electron mobility transistors,” Electron. Lett. 52 (2), 157-159 (2016).