Skip to main content

Ryou Research Group

Home  >  Papers in 2015 – 2014

Papers in 2015 – 2014

Journal Papers Published in 2015 – 2014

  1. X.-H. Li, H. Xie, F. A. Ponce, J.-H. Ryou, T. Detchprohm, and R. D. Dupuis, “Onset of surface stimulated emission at 260 nm at room temperature from AlGaN multiple-quantum wells grown on sapphire substrate,” Appl. Phys. Lett. 107 (24), 241109-1-4 (2015).
  2. S. Shervin, S.-H. Kim, M. Asadirad, S. Ravipati, K.-H. Lee, K. Bulashevich, and J.-H. Ryou, “Strain-effect transistors:  Theoretical study on the effects of external strain on III-nitride high-electron-mobility transistors on flexible substrates,” Appl. Phys. Lett. 107 (19), 193504-1-5 (2015).
  3. J. Kim, M.-H. Ji, T. Detchprohm, R. D. Dupuis, J.-H. Ryou, A. K. Sood, N. K. Dhar, and J. Lewis, “Comparison of AlGaN p-i-n ultraviolet avalanche photodiodes grown on free-standing GaN and sapphire substrates,” Appl. Phys. Express 8 (12), 122202-1-4 (2015).
  4. J. Kim, M.-H. Ji, T. Detchprohm, R. D. Dupuis, A. M. Fischer, F. A. Ponce, and J.-H. Ryou, “Effect of Group-III precursors on unintentional gallium incorporation during epitaxial growth of InAlN layers by metalorganic chemical vapor deposition,” J. Appl. Phys. 118 (12), 125303-1-6 (2015).
  5. K. H. Lee, H. J. Park, S. H. Kim, M. Asadirad, Y.-T. Moon, J. S. Kwak, and J.-H. Ryou, “Light extraction efficiency control in AlGaN-based deep-ultraviolet flip-chip light-emitting diodes:  A comparison to visible flip-chip light-emitting diodes,” Opt. Express 23 (16), 20340-20349 (2015).
  6. Y.-S. Liu, T.-T. Kao, Md. M. Satter, Z. Lochner, S.-C. Shen, T. Detchprohm, P. D. Yoder, R. D. Dupuis, J.-H. Ryou, A. M. Fischer, Y. O. Wei, H. Xie, and F. A. Ponce, “Inverse-tapered p-waveguide for efficient vertical hole transport in high-[Al] AlGaN multiple-quantum well double-heterojunction emitters grown by metalorganic chemical vapor deposition on AlN substrates,” IEEE Photon. Technol. Lett. 27(16), 1768-1771 (2015).
  7. K. H. Lee, S.-H. Kim, W.-S. Lim, J.-O. Song, and J.-H. Ryou, “Visible light-emitting diodes with thin-film-flip-chip-based wafer-level chip-scale package technology with anisotropic conductive film bonding,” IEEE Electron Device Lett. 36 (7), 702-704 (2015).
  8. J. Kim, M.-H. Ji, T. Detchprohm, J.-H. Ryou, R. D. Dupuis. A. K. Sood, and N. K. Dhar, “AlxGa1-xN ultraviolet avalanche photodiodes with avalanche gain greater than 105 grown on GaN substrate,” IEEE Photon. Technol. Lett. 27 (6), 642-645 (2015).
  9. Y.-J. Yu, K. S. Kim, J. Nam, S. R. Kwon, H. Byun, K. Lee, J.-H. Ryou, R. D. Dupuis, J. Kim, G. Ahn, S. Ryu, M.-Y. Ryu, and J. S. Kim, “Temperature-dependent resonance energy transfer from semiconductor quantum wells to graphene,” Nano Lett. 15 (2), 896-902 (2015).
  10. H. M. Oh, C.-R. Lee, J. S. Kim, K. Pyun, K. J. Lee, M. S. Jeong, Y. H. Kim, J.-Y. Leem, and J.-H. Ryou, “Periodic variation in the electroluminescence intensity on a single pattern from InGaN/GaN light-emitting diodes fabricated on lens-shaped patterns,” J. Kor. Phys. Soc. 66 (2), 266-269 (2015).
  11. B. Jo, C.-R. Lee, J. S. Kim, W. S. Han, J. H. Song, J.-H. Ryou, J. H. Lee, and J.-Y. Leem, “High-power continuous-wave operation of InP-based InAs quantum-dot laser with dot-in-a-well structure and strain-modulating layer,” Laser Phys. Lett. 11 (11), 115815-1-6 (2014).
  12. B. Jo, C.-R. Lee, J. S. Kim, W. S. Han, J. H. Song, J.-Y. Leem, S. K. Noh, J.-H. Ryou, and R. D. Dupuis, “Investigation on the lasing characteristics of InAs/InGaAsP quantum dots with additional confinement structures,” J. Crystal Growth 393, 59-63 (2014).
  13. J. Kim, M. H. Ji, D. Yuan, R. Guo, J.-P. Liu, M. Asadirad, T. Detchprohm, M.-K. Kwon, R. D. Dupuis, S. Das, and J.-H. Ryou, “Direct periodic patterning of GaN-based light-emitting diodes by three-beam interference laser ablation,” Appl. Phys. Lett. 104 (14), 1411105-1-4 (2014).
  14. J. Kim, Z. Lochner, M.-H. Ji, S. Choi, H. J. Kim, J. S. Kim, R. D. Dupuis, A. M. Fischer, R. Juday, Y. Huang, T. Li, J. Y. Huang, F. A. Ponce, and J.-H. Ryou, “Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions,” J. Crystal Growth 388, 143-149 (2014).
  15. S. Choi, H. J. Kim, Z. Lochner, J. Kim, R. D. Dupuis, A. M. Fischer, R. Juday, Y. Huang, T. Li, J. Y. Huang, F. A. Ponce, and J.-H. Ryou, “Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating,” J. Crystal Growth 388, 137-42 (2014).