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Ryou Research Group

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Papers in 2013 – 2012

Journal Papers Published in 2013 – 2012

  1. S. Kim, H. J. Kim, S. Choi, Z. Lochner, J.-H. Ryou, R. D. Dupuis, K.-S. Ahn, and H. Kim, “Electrical characteristics of Ti/Al contacts on AlInN:Mg/GaN heterostructures,” 52 (10), 10MA07-1-4 (2013).
  2. S. Kim, H. J. Kim, S. Choi, Z. Lochner, J.-H. Ryou, R. D. Dupuis, K.-S. Ahn, and H. Kim, “Electrical characteristics of Pt Schottky contacts on AlInN:Mg/GaN heterostructures,” 52 (10), 10MA05-1-4 (2013).
  3. Z. Lochner, X.-H. Li, T.-T. Kao, Md. M.Satter, H. J. Kim, S.-C. Shen, P. D. Yoder, J.-H. Ryou, R. D. Dupuis, K. W. Sun, Y. Wei, T. Li, A. M. Fischer, and F. A. Ponce, “Stimulated emission at 257 nm from optically-pumped AlGaN/AlN heterostructure on AlN substrate,” 210 (9), 1968-1970 (2013).
  4. J. Kim, M.-H. Ji, Z. Lochner, S. Choi, J. P. Liu, Md. M. Satter, P. D. Yoder, R. D. Dupuis, R. Juday, A. M. Fischer, F. A. Ponce, and J.-H. Ryou, “Improved hole transport by p-InGaN layer in multiple quantum wells of visible LEDs,” IEEE Photon. Technol. Lett.25 (18), 1789-1792 (2013).
  5. R. Juday, A. M. Fischer, Y. Huang, J. Y. Huang, H. J. Kim, J.-H. Ryou, R. D. Dupuis, D. P. Bour, and F. A. Ponce, “Hydrogen-related, deeply-bound excitons in Mg-doped GaN films,” Appl. Phys. Lett. 103 (8), 082103-1-5 (2013).
  6. Z. Lochner, T.-T. Kao, Y.-S. Liu, X.-H. Li, Md. M.Satter, S.-C. Shen, P. D. Yoder, J.-H. Ryou, R. D. Dupuis, Y. Wei, H. Xie, A. Fischer, and F. A. Ponce, “Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate,” Appl. Phys. Lett. 102 (10), 101110-1-4 (2013).
  7. S. Kim, J.-H. Ryou, R. D. Dupuis, and H. Kim, “Carrier transport mechanism of low resistance Ti/Al/Au ohmic contacts to AlInN/GaN heterostructures,” Appl. Phys. Lett. 102 (5), 052107-1-4 (2013).
  8. D. W. Park, C.-R. Lee, J. S. Kim, S. J. Lee, Y. H. Kim, S. K. Noh, H. M. Oh, Y. H. Kim, J.-Y. Leem, M. S. Jeong, and J.-H. Ryou, “Self-catalyzed GaAs nanowires without Ga droplets formed on Si (111),” J. Kor. Phys. Soc. 61 (12), 2017-2021 (2012).
  9. S. Choi, M.-H. Ji, J. Kim, H. J. Kim, Md. M.Satter, J.-H. Ryou, P. D. Yoder, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Efficiency droop due to electron spill-over and limited hole transport in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers,” Appl. Phys. Lett. 101 (16), 161110-1-5 (2012).