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Notable Papers

Notable Papers

  • “Skin-attached piezoelectric sensor arrays for continuous monitoring of oculomotor movements,” Adv. Healthc. Mater. 13, 2303581 (2024). [Featured frontispiece article] (IF: 10.0)
  • “Piezoelectric sensor operating at very high temperatures and in extreme environments made of flexible ultrawide-bandgap single-crystalline AlN thin films,” Adv. Funct. Mater. 33, 2212538 (2023). [Featured front-cover article] (IF: 19.92)
  • “All-around diamond for cooling high-power devices,” Nat. Electron. 5, 834 (2022). (IF: 33.255)
  • “Flexible single-crystalline GaN substrate by direct deposition of III-N thin films on polycrystalline metal tape,” J. Mater. Chem. C 9, 2243 (2021). [Featured front-cover article in issue 7 of volume 9 (February, 2021)]
  • “Highly-sensitive skin-attachable self-powered eye-movement sensor using flexible non-hazardous piezoelectric thin film,” Adv. Funct. Mater. 31, 2008242 (2020). (IF: 16.836)
  • “Modulation of the 2-dimensional electron gas channel in flexible AlGaN/GaN high-electron-mobility transistors by mechanical bending,” Appl. Phys. Lett. 116, 123501 (2020). [Featured editor’s pick article in issue 12 of volume 116 (March, 2020)]
  • “High durable, biocompatible and flexible piezoelectric pulse sensor using III-N thin film,” Adv. Funct. Mater. 29, 1903162 (2019). [Featured back-cover article in issue 37 of volume 29 (September, 2019)] (IF = 15.621)
  • “Polarization modulation effect of BeO on AlGaN/GaN high-electron-mobility transistors,” Appl. Phys. Lett. 115, 103502 (2019). [Featured editor’s pick article in issue 10 of volume 115 (September, 2019)]
  • “Thermal management and characterization of high-power wide-bandgap semiconductor electronic and photonic devices in automotive applications,” J. Electron. Packaging 141, 020801 (2019). [Invited review paper] 
  • “Flexible GaAs solar cells on roll-to-roll processed epitaxial Ge films on metal foils: a route towards low-cost and high-performance III-V photovoltaics,” Energy Environ. Sci. 12, 756 (2019). (IF = 33.250)
  • “Biocompatible and sustainable power supply for self-powered wearable and implantable electronics using flexible III-nitride thin-film-based piezoelectric generator,” Nano Energy 57, 670 (2019). (IF = 15.548)
  • “High-efficiency flexible III-V thin-film photovoltaic solar cells based on single-crystal-like thin-film directly grown on metallic tapes,” Prog. Photovoltaics: Res. Appl. 27, 30 (2019). [Featured cover article in issue 1 of volume 27 (January, 2019)]
  • “Improved light output power of 16´16 pixelated micro-LEDs for headlights by enhancing the reflectivity and coverage of the p-electrode,” Phys. Status Solidi A 215, 1700571 (2018). [Featured cover article in issue 10 of volume 215 (May, 2018)]
  • “Impact of electron flux on plasma damage-free sputtering of ultrathin indium-tin-oxide contact layer on p-GaN for InGaN/GaN light-emitting diodes,” Adv. Sci. 5, 1700637 (2018). (IF = 15.804)
  • “New insight into Ni-rich layered structure for next-generation Li rechargeable batteries,” Adv. Energy Mater. 8, 1701788 (2018). [Featured cover article in issue 4 of volume 8 (February, 2018)] (IF = 24.884)
  • “Temperature-dependent thermal conductivity of flexible yttria-stabilized zirconia substrate via 3ω technique,” Phys. Status Solidi A 214, 1700069 (2017). [Featured back cover article in issue 10 of volume 214 (October, 2017)]
  • “High-performance flexible thin-film transistors based on single-crystal-like germanium on glass,” Adv. Electron. Mater. 2, 1600041 (2016). [Featured frontispiece article in issue 8 of volume 2 (August, 2016)]
  • “Bendable III-N visible light-emitting diodes beyond mechanical flexibility:  Theoretical study on quantum efficiency improvement and color tunability by external strain,” ACS Photon. 3, 486 (2016). [Featured cover article in issue 3 of volume 3 (March, 2016)]
  • “Temperature-dependent resonance energy transfer from semiconductor quantum wells to graphene,” Nano Lett. 15, 896 (2015). (IF = 12.279)
  • “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22, 4749 (2010). (IF = 25.809)
  • “Control of quantum confined Stark effect in InGaN-based quantum wells,” IEEE J. Select. Topic. Quantum Electron. 15, 1080 (2009). [Invited paper]
  • “Growth of uniformly aligned ZnO nanowire heterojunction arrays on GaN, AlN, and Al0.5Ga0.5N substrates,” J. Am. Chem. Soc. 127, 7920 (2005). (IF = 14.695)